Characterize millimeter wave amplifiers using an innovative single connection approach

Similar to amplifiers intended for microwave applications, the emergence of active devices for millimeter wave (mm-wave) applications will require characterization of both S-parameters and gain compression, especially in the on-wafer environment. This paper presents an innovative single connection multiple measurements (SCMM) approach based on a vector network analyzer (VNA) to characterize a W-band (75-110 GHz) amplifier in terms of S-parameters and gain compression. In this approach, the second test channel integrates a new mm-wave electronic variable attenuator to optimize dynamic range and avoid compression artifacts from the high output power of the amplifier. A comparison to power meter measurements demonstrates the accuracy of this approach. Repeatability data is presented on the mm-wave electronic variable attenuator.