Highly Reliable Integrated Gate Driver Circuit for Large TFT-LCD Applications

This letter presents a novel integrated hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver circuit using ac driving (33% duty) to prevent the floating of row lines and reduce the bias voltage of pull-down TFTs to suppress the threshold voltage (
V
_TH
) shift of a-Si:H TFTs. The
V
_TH
shift of the TFTs in this design is reduced by 49.93% from that achieved using the 25%-duty ac-driving structure. In a reliability test, the new circuit operates stably at a high temperature (
T
= 60°C) for more than 240 h.