60 GHz SiGe:C HBT Power Amplifier With 17.4 dBm Output Power and 16.3% PAE

Single stage cascode power amplifier for 60 GHz band is presented in this letter. Modeling methodology, together with effects of (im)proper local interconnect modeling on achievable output power is discussed. Design partitioning is proposed to reduce the complexity of EM models, while retaining the accuracy of simulation. Test chip was fabricated in a 0.25
$\mu$
m BiCMOS SiGe:C HBT technology with 200/200 GHz
$f_{T}/f_{\rm MAX}$
, and measured on-wafer. Measurement results are in close agreement with simulation, validating our modeling approach. Saturated output power of 17.4 dBm and peak PAE of 16.3% was measured at 61.5 GHz. Small signal measurements indicate that the PA covers the whole unlicensed 60 GHz band.