A Correlative Analysis Between Characteristics of FinFETs and SRAM Performance

A correlation between the characteristics of the 30-nm
LG
fin-shaped field-effect transistors and the static random-access memory performance is precisely studied. By investigating an effect of the
V
_th
variation to the static noise margin (SNM) variation of two different memory states of the storage node, it is revealed that the
V
_th
variations of the pull-up, pull-down, and pass-gate transistors correlate with the SNM. Moreover, the contribution and the severity of each transistor variation to σSNM are clarified.