Pulse plated AgInSe2 films

In this work, the pulse electrodeposition technique has been employed for the first time to deposit AglnSe
₂
films. AglnSe
₂
films were deposited by the pulse electrodeposition technique at room temperature from a bath containing Analar grade 10 mM silver sulphate, 50 mM indium sulphate and 5 mM SeO
₂
. The deposition potential was maintained as 0.98V (SCE). Tin oxide coated glass substrates (5.0 ohms/sq) was used as the substrate. The duty cycle was varied in the range of 6 50 %. The XRD profile of the thin films deposited at different duty cycles indicate the peaks corresponding to AgInSe
₂
. Atomic force microscopy studies indicated that the surface roughness increased from 0.8 nm to 1.7 nm with duty cycle. The transmission spectra exhibited interference fringes. The room temperature resistivity increased from 0.1 ohm cm to 10 ohm cm with decrease of duty cycle. Photoelectrochemical cell studies were made using the films deposited at different duty cycles. The photo output was observed to increase with duty cycle. For a film deposited at 50 % duty cycle, an open circuit voltage of 0.55 V and a short circuit current density of 5.0 mA cm
^-2
at 60 mW cm
^-2
illumination.