The structure and characteristics of polyimide thin films by vapor deposition polymerization method

In this work, polyimide thin films were fabricated by VDPM (vapor deposition polymerization method) of dry processes which makes it easy to control the film's thickness and hard to cause pollution due to volatile solvents. The structural analysis of molecular and electrical properties was tested. From FT-IR, polyimide was changed by curing through the precursor polyamic acid (PAA); 300/spl deg/C is an apt cured temperature. From electrical measurement, the polyimide has a resistivity of about 3.2/spl times/10/sup 15/ /spl Omega/ cm at 30/spl deg/C and the dielectric breakdown is about 4.61 MV/cm. From these experimental results, the application of the polyimide thin films as an insulator in semiconductor devices is suggested.