Growth and scintillation properties of Pr doped (Lu,Y)3(Ga,Al)5O12 single crystals

Pr: (Lu,Y)
₃
(Ga,Al)
₅
O
₁₂
single crystals were grown by the micro-pulling down (μ-PD) method. Luminescence and scintillation properties were measured. The substitution phenomenon in the Lu
³⁺
sites with Y
³⁺
and Al
³⁺
sites with Ga
³⁺
in garnet structure has been studied. Pr
³⁺
5d-4f emission within 300-400nm accompanied by weak Pr
³⁺
4f-4f emission in 480-650nm are observed in Ga 0-60 at.% substituted samples. Ga 80 at.% substituted sample shows only Pr
³⁺
4f-4f emission. The light output of Pr1%:Lu
₂
Y
₁
Ga
₂
Al
₂
O
₁₂
sample was almost same as that of Cz grown Pr:LuAG standard. Two-component scintillation decay shows 17.9ns (93%) and 68.0ns (7%) using the PMT and digital oscilloscope TDS5032B. Slower decay components are reduced by Ga and Y substitution in LuAG structure.