High performance charge-trapping flash memory with highly-scaled trapping layer

We report a novel charge-trapping (CT) flash memory device with highly scaled equivalent-Si
3
N
4
-thickness (ENT) trapping layer <4 nm. This device shows a large 10-year extrapolated retention window of 3.1 V at 125°C and excellent endurance of 10
⁶
cycles, under the fast 100 μs and low ±16 V program/erase. These excellent memory device performances and ultra-thin ENT trapping thickness are the enable technology to continuously downscale the flash memory.