Investigation of resistive switching properties in Sm2O3 memory devices

The resistance switching behavior has been reported in various materials, including perovskite oxides, transition metal oxides, organics, etc. Among these materials, it is interesting to investigate the RRAMs device based on high-k materials, which are appropriate to integration with CMOS process in the future. Samarium oxide (Sm
₂
O
₃
) is one of important rare earth oxide materials. It has been investigated as high-k materials to substitute SiO
₂
in CMOS device. Hence, this study investigates a sputtered Sm
₂
O
₃
thin film to apply into a resistive random access memory device. The proposed device exhibits a stable resistance ratio after 10
⁴
cycling bias pulses and no degradation for retention characteristics monitored after an endurance test at 30°C.