Band alignment of TFET heterojunctions and post deposition annealing effects by internal photoemission spectroscopy

The tunneling field-effect transistor (TFET) has been attracting increasing attention for low-voltage logic application [1]. Recently, III-V semiconductor TFETs are being extensively explored, showing higher on-state current than Si TFETs [1]-[3]. However, low subthreshold swings (SS) have not yet been demonstrated on any III-V TFETs, possibly due to the high density of traps at the high-k oxide and semiconductor interface [2]-[3]. It has been shown that post deposition anneal (PDA) can improve SS by reducing the interface trap density in III V TFETs [2].