Study of Damage Engineering—Quantitative Scatter Defect Measurements of Ultralow Energy Implantation Doping Using the Continuous Anodic Oxidation Technique/Differential Hall Effect

The continuous anodic oxidation technique/differential Hall effect technique is used to study damage engineering of ultralow energy doping. It has been found that the scattering defect concentrations of the beam-line (BL) implants strongly correlate to the implant ion specie atomic mass unit and energy. Plasma doping (PLAD) seems to show a different mechanism for scatter defects. PLAD processes can have an in situ B-deposited film during implant and have less direct ion bombardment on the Si surface. The low scattering defect concentrations of PLAD implants (B
₂
H
₆
and BF
₃
) indicate that PLAD implants show an intrinsic advantage over BL counterparts in the current process regime.