Photon-recycling GaN p-n diodes demonstrating temperature-independent, extremely low on-resistance

Photon recycling was used to increase ionization of magnesium in GaN p-n diodes by reducing anode radius to 20 μm. On-resistance of GaN p-n diodes (with breakdown voltages of 0.7-0.8 kV) was extremely low (i.e., 0.5 mΩcm
²
at 5 V) in the temperature range of 273-373 K. This temperature-independent extremely low on-resistance is a promising characteristic for power-electronics applications such as fast, high-voltage freewheeling diodes.