Performance enhancement of p-channel InGaAs quantum-well FETs by superposition of process-induced uniaxial strain and epitaxially-grown biaxial strain

We have developed a device architecture for p-channel InGaAs quantum-well field-effect transistors (QW-FETs) that incorporates uniaxial strain through a self-aligned dielectric stressor. For the first time, we demonstrate substantial enhancement in the transport characteristics of p-channel InGaAs QW-FETs through the combination of compressive uniaxial strain and compressive epitaxially grown biaxial strain. Up to 36% increase of intrinsic transconductance has been observed in devices with 2 μm gate length.