Enhancement technologies and physical understanding of electron mobility in III–V n-MOSFETs with strain and MOS interface buffer engineering

In this paper, we have investigated the electron transport properties under two types of mobility enhancement engineering, which are channel strain and MOS interface buffer engineering. We have demonstrated epitaxial-based biaxially strained In
_0.53
Ga
_0.47
As MOSFETs. Tensile strained In
_0.53
Ga
_0.47
As MOSFETs shows high peak mobility of 2150 cm
²
/Vs. Furthermore, we have demonstrated high performance InAs-OI(-on insulator) MOSFETs on Si substrate with MOS interface buffer layer by direct wafer bonding, showing high peak mobility of 3180 cm
²
/Vs. The scattering mechanisms for the electron mobility in thin body In
_x
Ga
_1-x
As(InAs)-OI MOSFETs have been systematically analyzed and identified, for the first time.