Thermally-assisted Ti/Pr0.7Ca0.3MnO3 ReRAM with excellent switching speed and retention characteristics

We proposed for the first time thermally-assisted resistive switching random access memory (ReRAM) device to overcome the voltage-time dilemma using Ti/Pr
_0.7
Ca
_0.3
MnO
₃
(Ti/PCMO) with Ge
₂
Sb
₂
Te
₅
(GST) thermoelectric heater as well as thermal barrier (Fig. 1). “Thermoelectric heating effect” from GST/Ti junction and “thermal barrier effect” from the heat confinement by GST and PCMO thermal insulators successfully improved switching speed while “large effective Schottky barrier (SB) height (Φ
_eff
)” provided excellent robustness to high-temperature retention and read/set/reset disturbance characteristics (Fig. 2).