High-frequency performance of graphene field effect transistors with saturating IV-characteristics

High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and f
_max
values as high as 34 GHz at 600-nm channel length. Bias dependence of f
_T
and f
_max
and the effect of the ambipolar channel on transconductance and output resistance are also examined.