Simulation of Total Ionising Dose on LDMOS devices for High Energy Physics applications

The investigation of the Total Ionising Dose (TID) impact on the electrical characteristics of Lateral Diffused MOS transistors (LDMOS) requires the performance of a large number of complex and costly irradiation experiments. The development of a suitable simulation procedure would be of major interest in order to reduce the effort in time and cost. This paper describes a simulation methodology for the emulation of TID effects based on a physics-based code. The obtained simulation results are validated by comparing with available experimental data which are also used to tune the simulation fitting parameters.