High-speed InP/InGaAs uni-traveling-carrier photodiodes with 3-dB bandwidth over 150 GHz

High-speed and high-saturation-power photodetectors operating at 1.3 and 1.55 /spl mu/m wavelength are attracting considerable attention for the purpose of configuring receivers with no broadband electronic post-amplifier. The uni-traveling-carrier photodiode (UTCPD) having a p-type photo-absorption layer and a widegap electron-collection layer is one candidate that fulfills the requirements. In this paper, we study photo-absorption layer design for faster response and demonstrate UTC-PD operations with 3-dB bandwidth of 152 GHz.