Quantitative simulation of strained and unstrained InP-based resonant tunneling diodes

State-of-the-art InP-based resonant tunneling diodes (RTDs) are being developed for circuit applications such as low power memory cells and high speed adders. Depending on the application RTDs must be designed to provide either a low or a high current density. Quantitative modeling of such devices is expected to reduce the device development cycle time significantly. We have expanded our interactive design and analysis software NEMO (Nanoelectronic Modeling) to quantitatively model pseudomorphic InP-based RTDs which can include lattice matched In/sub 0.53/Ga/sub 0.47/As, In/sub 0.52/Al/sub 0.48/As, and pseudomorphic AlAs and InAs. We present the world's first quantitative simulations of strained and unstrained InP-based RTDs that include quantum charge self-consistency (Hartree) in a full band (sp/sup 3/s*) model.