Studies of N-type indium tin sulfide (InxSnyS) thin films using electrochemical deposition technique

Tin sulfide (SnS) films usually possess p-type electrical conductivity. Indium tin sulfide (In
_x
Sn
_y
S) thin films were deposited on indium-tin-oxide coated glass by electrochemical deposition from an aqueous solution containing Na
₂
S
₂
O
₃
, SnSO
₄
, and In
₂
(SO
₄
)
₃
. Different concentration of In
₂
(SO
₄
)
₃
was added to observe the effects on the structural and electrical properties. All thin films were deposited for the duration of 12 minutes. The thickness of the thin film was measured to be around 0.5 μm. The as-deposited thin films were characterized by scanning electron microscope, X-ray diffraction, Auger electron microscopy (AES) and photo-electro-chemical measurement We observed that the SnS surface morphologies changed when different concentration of indium was added. In this research, a transformation of p-type to n-type conductivity was revealed with additional of In
₂
(SO
₄
)
₃
greater than 1 mM concentration.