Low temperature preparation of the SiO/sub 2/ films with low interface trap density using ECR diffusion and ECR CVD method

Silicon oxide films were grown by Electron Cyclotron Resonance (ECR) diffusion and the ECR CVD method at low temperature. An MOS capacitor with 250 /spl Aring/ of oxide grown by ECR diffusion had a lower interface trap density of 4.24/spl times/10/sup 9/ cm/sup -2//spl middot/eV/sup -1/ than direct PECVD and remote PECVD. The measured interface oxide charge density for this film was 6.88/spl times/10/sup 11/ cm/sup -2/. In the case of the ECR CVD method, interface trap density was lower than 2.01/spl times/10/sup 10/ cm/sup -2//spl middot/eV/sup -1/.