Electromechanical Diode Cell for Cross-Point Nonvolatile Memory Arrays

An electromechanical diode nonvolatile memory cell design is proposed for implementation of compact (4F
²
) cross-point memory arrays. The first prototype cells are demonstrated to operate with relatively low set/reset voltages and excellent retention characteristics and are multi-time programmable (with endurance exceeding 10
⁴
set/reset cycles).