High-Performance GaN MOSFET With High-$\kappa$ $\hbox{LaAlO}_{3}/\hbox{SiO}_{2}$ Gate Dielectric

Using a high-κ LaAlO
₃
/SiO
₂
gate dielectric, the recessed-gate GaN MOSFET has a low threshold voltage (
V
_t
) of 0.1 V, low on-resistance (R
_on
) of 13.5 Ω·mm, high breakdown voltage of 385 V, high transconductance (g
_m
) of 136 mS/mm, and record-best normalized drive current (μC
_ox
) of 172 μA/V
²
. Such excellent device integrity is due to the small capacitance equivalent thickness of 3.0 nm, using a high-κ gate dielectric and recessed-gate etching.