Self-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers

III-V MOSFETs are currently being considered as a candidate for future high performance transistors [1]. In particular, In
_1-x
Ga
_x
As compounds are investigated for application in digital logic due to their advantageous electronic properties [2]. III-V technologies may be introduced beyond the 22 nm node, which will require a self aligned III/V device architecture as well as integration of high-κ gate oxides.