A New Approach to Implementing High-Frequency Correlated Noise for Bipolar Transistor Compact Modeling

A new approach to implementing correlated high-frequency noise in bipolar junction transistor (BJT) large-signal compact models is developed by placing an
RC
-delayed noise current between the base and collector nodes. The approach reproduces the two stages of noise transport in a BJT, i.e., noise generation in the base and emitter and transportation through the collector-base junction space-charge region (CB SCR). The frequency dependence of the intrinsic noise sources due to the CB SCR is fully described with an accuracy value up to the second order of ω. As an example, the negative frequency dependence of
S
_ic
is correctly described for the first time. The approach is applicable to any large-signal compact model, and it is demonstrated using measurement data in both InGaP/GaAs heterojunction bipolar transistors (HBTs) and SiGe HBTs.