The influence of the ambient and junction temperature on the MPS critical parameters

The measurements and simulations of isothermal and non-isothermal DC characteristics of SiC Schottky barrier diodes are presented in this paper. Various electro-thermal models for I-V characteristics calculation are proposed. The calculations of non-isothermal characteristics of SiC SBD's in the wide range of forward voltage are shown. The self-heating phenomenon, as an electro thermal positive feedback is discussed. The critical current and junction temperature estimation for SiC SBD is explained.