Monte Carlo Simulation of ${\rm Al}_{x}{\rm Ga}_{1-{x}}{\rm As}~(x\geq 0.6)$ Avalanche Photodiodes

In this paper, a Monte Carlo model is used to investigate the impact ionization properties of Al
_x
Ga
_1-x
As with a high composition of Al (x ≥ 0.6). Two Geiger-mode avalanche photodiode (APD) structures using Al
_x
Ga
_1-x
As as the multiplication region are studied. Simulations show a strong link between the APD properties and the electric field profile. It was also found that Al
_9.6
Ga
_0.4
As APD structure has higher excess noise and more abrupt breakdown probability compared to Al
_0.8
Ga
_0.2
As.