A 2.5-V, 1-W monolithic CMOS RF power amplifier

A monolithic CMOS RF power amplifier has been designed and fabricated in a standard 0.8-/spl mu/m CMOS technology and shown to provide l-W of output power at 824-849 MHz to a 50-ohm load from a single 2.5-V supply. The prototype amplifier has a measured drain efficiency of 62%, an overall power-added efficiency of 42%, a power gain of 25 dB, and a total die area of 1.5 mm/sup 2/.