A Quantitative Model for ELDRS and ${\rm H}_{2}$ Degradation Effects in Irradiated Oxides Based on First Principles Calculations

A physics-based TCAD model for enhanced low-dose-rate sensitivity in linear bipolar devices is developed. Quantitative agreement is found with measured data over a wide range of dose rates and H
₂
concentrations. Analysis of the degradation effects of individual defect types, the implementation of which has been informed by first principles calculations, provides insights into the mechanisms behind enhanced low-dose-rate effects in different hydrogen environments. The effects of initial defect concentration and location and the energetics of the defect-related reactions are explored. Conclusions are drawn about the roles of molecular hydrogen and hydrogenated defects in the radiation response of these devices.