Enhanced Temperature Dependence of Phonon-Scattering-Limited Mobility in Compressively Uniaxial Strained pMOSFETs

This paper investigates the temperature dependence of phonon-scattering-limited mobility μ
_PH
for advanced short-channel strained pMOS devices. By using the split CV method and Matthiessen's rule, surface-roughness-limited mobility μ
_SR
and μ
_PH
are successfully decoupled. This paper indicates that the temperature sensitivity of μ
_PH
is proportional to T
^-1.75
for a neutral stressor and becomes higher when compressive strain is applied. It is explained by the higher optical phonon energy induced by uniaxially compressive strain. Our new findings may also explain the previously reported higher temperature sensitivity of drain current present in uniaxial strained pMOSFETs.