Narrow-Width Effects on a Body-Tied Partially Depleted SOI MOSFET

In this paper, we present the investigation of narrow-width effects (NWEs) on partially depleted (PD) silicon-on-insulator (SOI) with different gate shape topologies. Based on dc/ac measurements and TCAD simulations, it shows detailed clarifications of body-tied-induced NWEs. The overall study demonstrates relationship between gate shape topologies, body-tied shape, and electrical width of the transistor. Provided physical-based analytical models are able to capture peak
GM
and
C
_GG
as function of gate length, transistor width, physical gate-overlap width, and number of body tied. This results in improving the overall model accuracy of body contact and floating-body PD SOI MOSFETs.