Coupled localized and distributed elements analysis applying an electromagnetic software in the frequency domain

A coupled localized and distributed elements analysis applying the F.E.M. in the frequency domain is described. First, two studies concerning a two port network and a gunn diode amplifier, are performed to prove with success the efficiency of our method. Then the main objective of this paper is to present an electromagnetic analysis of the passive area of a transistor (FET) taking into account all its physical and geometrical characteristics. Theoretical and experimental results are compared and they show encouraging agreement.