Surface-Potential-Based Analytic DC $I$ –$V$ Model With Effective Electron Density for $a$-IGZO TFTs Considering the Parasitic Resistance

A surface-potential-based analytic direct-current
I
-
V
model for amorphous indium-gallium-zinc-oxide thin-film transistors is proposed by adopting an effective electron density (
n
_eff
) model for inclusion of both free carriers and localized charges in the channel. The proposed
n
_eff
is efficient in reducing the error caused by neglecting the localized electron density
n
_loc
and allows a closed form of the analytic
I
-
V
model. The potential drop across the parasitic resistance R
_P
in the source and drain regions is also fully considered in the model. Finally, we confirmed good agreement of the proposed model with measured
I
_DS
-
V
_DS
characteristics over a wide range of
V
_GS
and
V
_DS
.