Application of Post-$\hbox{HfO}_{2}$ Fluorine Plasma Treatment for Improvement of $\hbox{In}_{0.53}\hbox{Ga}_{0.47} \hbox{As}$ MOSFET Performance

Notable improvements in the HfO
₂
/In
_0.53
Ga
_0.47
As gate stack have been achieved by a post- HfO
₂
fluorine plasma treatment, including excellent interface quality of low-equivalent-oxide-thickness HfO
₂
(1.4 nm) directly on In
_0.53
Ga
_0.47
As with no interface passivation layer, over five-times reduction in interface trap density from 2.8 × 10
¹²
to 4.9 × 10
¹¹
cm
^-2
·eV
^-1
, improved subthreshold swing from 127 to 109 mV/dec, and reduced
Id
-
Vg
hysteresis in pulsed
Id
-
Vg
measurement. Consequently, improved electrical performances have been achieved in 29% higher effective channel mobility and 29% higher drive current.