Fabrication and characterization of SiC thin films

Silicon carbide (SiC) is a material with excellent properties for micro systems applications. In this paper, three chemical vapor deposition methods, low pressure chemical vapor deposition (LPCVD), plasma enhance chemical vapor deposition (PECVD) at two different temperatures have been utilized to fabricate the silicon carbide thin films. The roughness, the crystal structure, the Young modulus, the hardness and the intrinsic stress of the silicon carbide films were studied in order to obtain the discriminating applications for MEMS fabrication.