A novel thin film transistor for high voltage circuitry on glass

This paper describes the operation and performance of a novel polysilicon high voltage thin film transistor (HVTFT) structure incorporating a Semi-Insulating (SI) field plate (SI HVTFT). Experimental data confirms that the semi-insulating layer reduces the on state current-pinching effect resulting in improved current drivability. In the off state the semi-insulating layer helps to reshape the potential distribution within the device offset region resulting in a high blocking capability. The 2-D numerical simulator MEDICI is used to gain an insight into the impact of the SI layer on device operation.