Electrical characteristics of a novel gate structure 4H-SiC power static induction transistor

A power SIT with a novel gate structure was conceived, in which high blocking gain and low on-state voltage have been simultaneously achieved and the characteristics of silicon carbide (SiC) have been effectively employed. Simulation studies on characteristics of the SIT have been conducted. When a forward bias that was less than the built-in voltage was applied to the gate, the on-state voltage dropped to 0.25 V (at 200 A/cm/sup 2/) and the gate reverse voltage required for blocking was 10 V for a SIT with a withstand voltage of 700 V. The on-state voltage dropped to 3.1 V (at 100 A/cm/sup 2/) and the gate reverse bias required for blocking was 80 V for a SIT with a withstand voltage of 5,000 V.