A new level-shifting technique by divided RESURF structure

An n-channel lateral DMOSFET (n-ch LDMOSFET) for 1200 V level-shifting has been developed by using a divided RESURF structure. A p-channel lateral MOSFET (p-ch LMOSFET) for 1200 V level-shifting has been realized by combining a RESURF structure and a p/sup -/ Lightly Doped Drain (p/sup -/ LDD) which is formed in a part of the RESURF structure. 1200 V level-shifting of these devices have been confirmed by circuit experiments. Furthermore, these structures have no limit of level shifting voltage basically.