Effect of different annealing methods on the properties of PSTT thin films

0.95Pb(Sc
0.5
Ta
0.5
)O
3
-0.05PbTiO
3
(PSTT5) thin films were prepared on LaNiO
3
/SiO
2
/Si substrate by RF sputtering, and the films were annealed by one-step rapid thermal annealing (OSRTA) and two-steps rapid thermal annealing (TSRTA), respectively. Results show that an appropriate repeated heat treatment could improve ferroelectric and dielectric properties of PSTT5 film, P
r
and E
c
of PSTT5 thin films annealed by optimal conditions are 11.88µC/cm
²
and 53.71 kV/cm, respectively.