Growth of high quality BiFeO3 thin films by dual ion beam sputtering

350-nm-thick BiFeO
₃
(BFO) thin films have been deposited by dual ion beam sputtering on SrRuO
₃
-buffered SrTiO
₃
(001) substrates of 0° and 0.5° off-cut along [100] at various Bi
₂
O
₃
-side/Fe
₂
O
₃
-side beam current ratio. The BFO thin film on 0.5° off-cut STO substrate deposited at beam current ratio of 20 mA/30 mA show fully saturated D-E hysteresis loops at room temperature. The remanent polarization (2P
_r
) was 132 μC/cm
²
. Stripe domain structure was also observed in IP piezoelectric response image. It is considered that the improvement of leakage of BFO on 0.5° off-cut STO substrate is due to reduction of 109° domain walls.