Reset Statistics of NiO-Based Resistive Switching Memories

In this letter, we present the characterization and modeling of the reset statistics of Pt/NiO/W resistive random access memories. The experimental observations show that the Weibull slopes of both
V
_reset
and
I
_reset
cumulative distributions increase linearly with 1/
R
_on
. The value of
V
_reset63%
is roughly independent of
R
_on
while
I
_reset63%
increases with 1/
R
_on
. Fully analytical cell-based models based on the thermal dissolution of conductive filament are proposed for the reset switching statistical distributions, which can account for the experimental results with a remarkable agreement.