A 60 GHz Sub-Harmonic Resistive FET Mixer Using 0.13 $\mu{\rm m}$ CMOS Technology

A 56 to 66 GHz sub-harmonic resistive mixer using 0.13 μm CMOS technology is presented in this letter. This mixer exhibits a flat conversion loss of about -12 and -13 dB and good isolations between ports from 56 to 66 GHz for both down and up-conversion with a lowest LO power of 0 and -1 dBm. The 2LO-RF isolation is more than 27 dB even if IF input power exceeds 4 dBm, which results from the mechanism of connecting drain and body of the device. Besides, this mixer has a relatively high input
P
_1dB
and a 3 GHz IF bandwidth in each band defined in IEEE 802.15.3c standard.