Features of surface and interface with dielectric for narrow-gap A3B5 semiconductors

The possibility of InAs surface passivation by the ultrathin (5-15 nm) native oxide films is presented. The density of surface states, (from the peak low-signal conductivity) shows that the boundary between the oxide - InAs is characterized by a low density of surface states 3-5·10
¹⁰
cm
^-2
eV
^-1
.