MOCVD growth of heavily p-type doped InGaAs using bismethylcyclopentadienyl-beryllium

Beryllium (Be) has been investigated as p-type dopant for InGaAs layers grown using bismethylcyclopentadienyl-beryllium ((MeCp)/sub 2/Be) by low-pressure metalorganic chemical vapor deposition. It is found that hole concentration is in proportion to the (MeCp)/sub 2/Be flow rate, which results in excellent doping controllability. Moreover, the doping efficiency of (MeCp)/sub 2/Be is one order of magnitude higher than that of diethylzinc (DEZn). InGaAs increases with increasing growth temperature in the temperature range from 570 to 625/spl deg/C. Heavily Be-doped InGaAs layers with specular surface morphology have been attained with a hole concentration in excess of 10/sup 19/ cm/sup -3/ by optimization of growth condition. (MeCp)/sub 2/Be is promising precursor as p-type dopant source for optoelectronic devices.