Optical and structural characterization of InAsP/InGaP strain compensated multiple quantum wells grown by GSMBE

High-quality InAsP/InP (3ML)/InGaP SC-MQWs with zero net strain up to 40 periods were grown by GSMBE. Compared with uncompensated InAsP/InP strained MQWs and InAsP/lnGaP SC-MQWs without the InP insertion layers, much sharper and symmetric satellite peaks in double-crystal X-ray diffraction and excellent photoluminescence was obtained from SC-MQWs with the InP insertion layers.