0.9 W/mm, 76% P.A.E. (7 GHz) GaInAs/InP composite channel HEMTs

The power performance of Ga/sub 0.47/In/sub 0.53/As/InP composite channel HEMTs at 7 GHz is presented. Devices with a gate width of 300 /spl mu/m exhibit 0.9 W/mm and 76% power-added-efficiency (P.A.E.) at 7 GHz with a two-terminal breakdown voltage of 13.3 V.