Inductorless Wideband CMOS Low-Noise Amplifiers Using Noise-Canceling Technique

Two inductorless wideband low-noise amplifiers (LNAs) fabricated in a 65-nm CMOS process are presented. By using the gain-enhanced noise-canceling technique, the gain at noise-cancelling condition is increased, while the input matching is maintained. The first work is a common-source LNA with resistive shunt feedback. It achieves a maximum power gain of 10.5 dB, a bandwidth of 10 GHz, a noise figure (NF) of 2.7-3.3 dB, and an IIP3 of -3.5 dBm. The power consumption is 13.7 mW from a 1-V supply, and the area is 0.02 mm
²
. The second work is a common-gate LNA. It achieves a maximum power gain of 10.7 dB, a bandwidth of 5.2 GHz, a NF of 2.9-5.4 dB, and an IIP3 of -6 dBm. The power consumption is 7 mW from a 1-V supply, and the area is 0.03 mm
²
. Experimental results demonstrate that the first LNA shows the largest bandwidth, and the second LNA has the lowest power consumption among the inductorless wideband LNAs.