Self-aligned InAs/Al0.45Ga0.55Sb vertical tunnel FETs

Tunnel field-effect transistors (TFETs) are under intense investigation for low-power applications because of their potential for extremely low subthreshold swing (SS) and low off-state leakage [1]. III–V semiconductors with small effective mass and near broken band alignment are considered to be ideal for TFETs in that they promise high on-current and I
ON
/I
OFF
ratios [2–3]. In this paper, we report the first demonstration of an InAs/Al
0.45
Ga
0.55
Sb heterojunction TFETs fabricated using an optical-lithography-only, self-aligned process and also investigate the effects limiting the InAs/Al
0.45
Ga
0.55
Sb TFET performance.