Lateral gate suspended-body carbon nanotube field-effect-transistors with sub-100nm air gap by precise positioning method

We report, for the first time, a self-aligned lateral gate suspended-body CNTFET with sub-lOOnm air gap fabricated by an improved precise positioning method.. The superior I-V characteristics of the lateral gate CNT FET are experimentally studied. The proposed suspended-body CNTFETs hold promise for bottom-up fabrication of resonant NEMS devices for sensing and RF applications.