Experimental investigation of scalability and transport in In0.7Ga0.3As multi-gate quantum well FET (MuQFET)

Compound semiconductors such as In
_0.7
Ga
_0.3
As and InSb are being actively researched as replacement for silicon channel materials for logic applications due to their superior transport properties. Planar III-V quantum-well FETs have already demonstrated with superior performance than the state-of-the art Si MOSFETs for low supply voltage (Vcc) applications. A key research challenge remains in addressing the scalability of III-V based quantum-well FETs to sub-14 nm node logic applications while still maintaining their excellent transport advantage. In this study, we demonstrate quasi-ballistic operation of non-planar, multi-gate, modulation doped, strained In
_0.7
Ga
_0.3
As quantum well FET (MuQFET), combining the electrostatic robustness of multi-gate configuration with the excellent electron mobility of high mobility quantum well channel, In
_0.7
Ga
_0.3
As (Figure 1).